| PART |
Description |
Maker |
| GS71208TP-8T GS71208TP-8 |
8ns 128K x 8 1Mb asynchronous SRAM
128K X 8 STANDARD SRAM, 8 ns, PDSO32 0.400 INCH, TSOP2-32
|
GSI Technology, Inc.
|
| N01L63W3AB25I N01L63W3AB25IT N01L63W3A |
1 Mb Ultra-Low Power Asynchronous CMOS SRAM
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K ? 16 bit
|
ON Semiconductor
|
| GS74116U-8 GS74116J-10I GS74116TP-12I |
8ns 256K x 16 4Mb asynchronous SRAM
10ns 256K x 16 4Mb asynchronous SRAM
12ns 256K x 16 4Mb asynchronous SRAM
|
GSI Technology
|
| N01L6183AB27I N01L6183AB27IT N01L6183AT27I N01L618 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM
|
ON Semiconductor
|
| N01L6183A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM
|
ON Semiconductor
|
| N01L163WN1A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit
|
NanoAmp Solutions
|
| IS61WV6416DALL/DALS IS61WV6416DBLL/DBLS |
64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS61WV6416EEBLL |
64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
|
Integrated Silicon Solution, Inc
|
| MT58L32L32P MT58L32L36P MT58L64L18P |
32K x 32, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器)
32K x 36, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器)
64K x 18, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器) 64K的18.3V的I / O的流水线，SCD的SyncBurst的SRAM兆，3.3V的输输出，流水线式，单循环取消选择，同步脉冲静态存储器
|
Micron Technology, Inc.
|
| MT58L32L32D MT58L32L36D MT58L64L18D |
32K x 36,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器)
64K x 18, 3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器)
32K x 32,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器) 32KX82,3.3 O的流水线，双氰胺SyncBurst的SRAM兆，3.3V的输输出，流水线式，双循环取消选择，同步脉冲静态存储器
|
Micron Technology, Inc.
Micrel Semiconductor, Inc.
|
